IMBG120R045M1HXTMA1 Infineon Technologies

Description: SICFET N-CH 1.2KV 47A TO263, Input Capacitance (Ciss) (Max) @ Vds: 1527 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -15V, Part Status: Active, Supplier Device Package: PG-TO263-7-12, Vgs(th) (Max) @ Id: 5.7V @ 7.5mA, Power Dissipation (Max): 227W (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 16A, 18V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).