IMBG120R060M1HXTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 13.5 EUR |
| 10+ | 10.31 EUR |
| 100+ | 8.06 EUR |
| 1000+ | 7.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IMBG120R060M1HXTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 36A TO263, Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -15V, Part Status: Active, Supplier Device Package: PG-TO263-7-12, Vgs(th) (Max) @ Id: 5.7V @ 5.6mA, Power Dissipation (Max): 181W (Tc), Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote IMBG120R060M1HXTMA1 nach Preis ab 7.98 EUR bis 14.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IMBG120R060M1HXTMA1 | Infineon Technologies |
 Description: SICFET N-CH 1200V 36A TO263Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +18V, -15V Part Status: Active Power Dissipation (Max): 181W (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 5.6mA |
auf Bestellung 1782 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IMBG120R060M1HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Description: SICFET N-CH 1200V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
auf Bestellung 1782 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.38 EUR |
| 10+ | 9.87 EUR |
| 100+ | 7.98 EUR |