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IMBG120R090M1HXTMA1 Infineon Technologies


Infineon-IMBG120R090M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ece3813269
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 26A TO263
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+6.27 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IMBG120R090M1HXTMA1 Infineon Technologies

Description: SICFET N-CH 1.2KV 26A TO263, Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -15V, Part Status: Active, Supplier Device Package: PG-TO263-7-12, Vgs(th) (Max) @ Id: 5.7V @ 3.7mA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).

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IMBG120R090M1HXTMA1 IMBG120R090M1HXTMA1 Infineon Technologies Infineon-IMBG120R090M1H-DataSheet-v02_02-EN.pdf SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
auf Bestellung 1295 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.87 EUR
10+7.43 EUR
100+6.39 EUR
500+6.11 EUR
1000+5.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBG120R090M1HXTMA1 IMBG120R090M1HXTMA1 Infineon Technologies Infineon-IMBG120R090M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ece3813269 Description: SICFET N-CH 1.2KV 26A TO263
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 2557 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.33 EUR
10+9.77 EUR
100+7.2 EUR
500+6.27 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMBG120R090M1HXTMA1 Infineon-IMBG120R090M1H-DataSheet-v02_02-EN.pdf
Hersteller: Infineon Technologies
SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
auf Bestellung 1295 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+9.87 EUR
10+7.43 EUR
100+6.39 EUR
500+6.11 EUR
1000+5.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBG120R090M1HXTMA1 Infineon-IMBG120R090M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ece3813269
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 26A TO263
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 2557 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.33 EUR
10+9.77 EUR
100+7.2 EUR
500+6.27 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH