IMBG40R015M2HXTMA1 Infineon Technologies

Description: SIC-MOS, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc), Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V, Power Dissipation (Max): 3.8W (Ta), 341W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 9.7mA, Supplier Device Package: PG-TO263-7-11, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V.