IMBG65R007M2HXTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 42.63 EUR |
| 10+ | 32.31 EUR |
| 100+ | 32.16 EUR |
| 500+ | 32.14 EUR |
| 1000+ | 27.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IMBG65R007M2HXTMA1 Infineon Technologies
Description: SICFET N-CH 650V 238A TO263-7, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V, Current - Continuous Drain (Id) @ 25°C: 238A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Supplier Device Package: PG-TO263-7-12, Vgs(th) (Max) @ Id: 5.6V @ 2.97mA, Power Dissipation (Max): 789W (Tc).
Weitere Produktangebote IMBG65R007M2HXTMA1 nach Preis ab 32.45 EUR bis 42.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||
|---|---|---|---|---|---|---|---|---|---|
 |
IMBG65R007M2HXTMA1 | Infineon Technologies |
 Description: SICFET N-CH 650V 238A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.6V @ 2.97mA Power Dissipation (Max): 789W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
auf Bestellung 611 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IMBG65R007M2HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 238A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 2.97mA
Power Dissipation (Max): 789W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SICFET N-CH 650V 238A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 2.97mA
Power Dissipation (Max): 789W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 611 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 42.8 EUR |
| 10+ | 32.45 EUR |