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IMBG65R007M2HXTMA1

IMBG65R007M2HXTMA1 Infineon Technologies

Infineon-IMBG65R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd631e55252b0 Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 238A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.97mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
auf Bestellung 211 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.73 EUR
10+35.17 EUR
100+31.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IMBG65R007M2HXTMA1 Infineon Technologies

Description: SICFET N-CH 650V 238A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 238A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V, Power Dissipation (Max): 789W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 2.97mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V.

Weitere Produktangebote IMBG65R007M2HXTMA1 nach Preis ab 33.39 EUR bis 51 EUR

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IMBG65R007M2HXTMA1 IMBG65R007M2HXTMA1 Hersteller : Infineon Technologies Infineon_IMBG65R007M2H_DataSheet_v01_00_EN-3422249.pdf SiC MOSFETs SILICON CARBIDE MOSFET
auf Bestellung 963 Stücke:
Lieferzeit 171-175 Tag (e)
Anzahl Preis
1+51 EUR
10+42.26 EUR
25+39.78 EUR
100+37.07 EUR
250+35.76 EUR
500+34.2 EUR
1000+33.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBG65R007M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMBG65R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd631e55252b0 IMBG65R007M2HXTMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMBG65R007M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMBG65R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd631e55252b0 IMBG65R007M2HXTMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMBG65R007M2HXTMA1 IMBG65R007M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMBG65R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd631e55252b0 Description: SICFET N-CH 650V 238A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.97mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH