IMBG65R015M2HXTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Produktrezensionen
Produktbewertung abgeben
Technische Details IMBG65R015M2HXTMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 115A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 13mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V.
Weitere Produktangebote IMBG65R015M2HXTMA1 nach Preis ab 14.27 EUR bis 25.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IMBG65R015M2HXTMA1 | Infineon Technologies |
Trans MOSFET N-CH SiC 650V 115A 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 11000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
|
IMBG65R015M2HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V |
auf Bestellung 1438 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IMBG65R015M2HXTMA1 | Infineon Technologies |
SiC MOSFETs SILICON CARBIDE MOSFET |
auf Bestellung 1131 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IMBG65R015M2HXTMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 650V 115A 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 650V 115A 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 14.47 EUR |
| IMBG65R015M2HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
auf Bestellung 1438 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.06 EUR |
| 10+ | 17.7 EUR |
| 100+ | 15.11 EUR |
| IMBG65R015M2HXTMA1 |
|
Hersteller: Infineon Technologies
SiC MOSFETs SILICON CARBIDE MOSFET
SiC MOSFETs SILICON CARBIDE MOSFET
auf Bestellung 1131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.66 EUR |
| 10+ | 18.43 EUR |
| 100+ | 15.29 EUR |
| 1000+ | 14.27 EUR |