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IMBG65R020M2HXTMA1

IMBG65R020M2HXTMA1 Infineon Technologies

Infineon-IMBG65R020M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63215ab52b6 Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.41 EUR
10+13.67 EUR
100+12.02 EUR
500+11.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IMBG65R020M2HXTMA1 Infineon Technologies

Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 91A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V, Power Dissipation (Max): 326W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 9.5mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V.

Weitere Produktangebote IMBG65R020M2HXTMA1 nach Preis ab 13.85 EUR bis 21.96 EUR

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IMBG65R020M2HXTMA1 IMBG65R020M2HXTMA1 Hersteller : Infineon Technologies Infineon_IMBG65R020M2H_DataSheet_v01_00_EN-3422119.pdf SiC MOSFETs SILICON CARBIDE MOSFET
auf Bestellung 441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.96 EUR
10+17.58 EUR
25+16.39 EUR
50+15.56 EUR
100+15.52 EUR
250+14.89 EUR
500+13.85 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBG65R020M2HXTMA1 IMBG65R020M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMBG65R020M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63215ab52b6 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH