IMBG65R030M1HXTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 17.72 EUR |
| 10+ | 10.96 EUR |
| 2000+ | 9.47 EUR |
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Technische Details IMBG65R030M1HXTMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V, Power Dissipation (Max): 234W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 8.8mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V.
Weitere Produktangebote IMBG65R030M1HXTMA1 nach Preis ab 12.42 EUR bis 23.32 EUR
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IMBG65R030M1HXTMA1 | Infineon Technologies |
 Description: SILICON CARBIDE MOSFET PG-TO263-Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 8.8mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V |
auf Bestellung 924 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMBG65R030M1HXTMA1 |
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Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
auf Bestellung 924 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.32 EUR |
| 10+ | 16.39 EUR |
| 100+ | 12.49 EUR |
| 500+ | 12.42 EUR |