IMBG65R048M1HXTMA1 Infineon Technologies
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 17.53 EUR |
| 10+ | 15.45 EUR |
| 25+ | 15.03 EUR |
| 50+ | 14.19 EUR |
| 100+ | 13.36 EUR |
| 250+ | 12.95 EUR |
| 500+ | 12.9 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IMBG65R048M1HXTMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V, Power Dissipation (Max): 183W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 6mA, Supplier Device Package: PG-TO263-7-12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V.
Weitere Produktangebote IMBG65R048M1HXTMA1 nach Preis ab 11.19 EUR bis 17.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IMBG65R048M1HXTMA1 | Hersteller : Infineon Technologies |
 Description: SILICON CARBIDE MOSFET PG-TO263-Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V |
auf Bestellung 909 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| IMBG65R048M1HXTMA1 | Hersteller : Infineon Technologies |
SP005539172 |
Produkt ist nicht verfügbar |
||||||||||||
 |
IMBG65R048M1HXTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 650V 45A 8-Pin(7+Tab) TO-263 T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IMBG65R048M1HXTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 650V 45A 8-Pin(7+Tab) TO-263 T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IMBG65R048M1HXTMA1 | Hersteller : Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V |
Produkt ist nicht verfügbar |