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IMBG65R050M2HXTMA1

IMBG65R050M2HXTMA1 Infineon Technologies

Infineon_IMBG65R050M2H_DataSheet_v01_00_EN-3421343.pdf Hersteller: Infineon Technologies
SiC MOSFETs SILICON CARBIDE MOSFET
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.08 EUR
10+10.12 EUR
25+9.38 EUR
100+8.5 EUR
250+7.99 EUR
500+7.62 EUR
1000+7.59 EUR
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Technische Details IMBG65R050M2HXTMA1 Infineon Technologies

Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V, Power Dissipation (Max): 172W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 3.7mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V.

Weitere Produktangebote IMBG65R050M2HXTMA1 nach Preis ab 7.35 EUR bis 13.43 EUR

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IMBG65R050M2HXTMA1 IMBG65R050M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMBG65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b78ab52df Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.43 EUR
10+9.33 EUR
100+8.07 EUR
500+7.35 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IMBG65R050M2HXTMA1 IMBG65R050M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMBG65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b78ab52df Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH