IMBG65R060M2H Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IMBG65R060M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.18 EUR |
| 10+ | 8.60 EUR |
| 25+ | 7.96 EUR |
| 100+ | 7.25 EUR |
| 250+ | 6.91 EUR |
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Technische Details IMBG65R060M2H Infineon Technologies
Description: IMBG65R060M2H, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 3.1mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V.
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IMBG65R060M2H | Hersteller : Infineon Technologies |
Description: IMBG65R060M2H Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 3.1mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V |
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