IMBG65R260M1HXTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 136+ | 1.08 EUR |
| 139+ | 1.04 EUR |
| 141+ | 1 EUR |
| 250+ | 0.96 EUR |
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Technische Details IMBG65R260M1HXTMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 1.1mA, Supplier Device Package: PG-TO263-7-12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V.
Weitere Produktangebote IMBG65R260M1HXTMA1 nach Preis ab 0.88 EUR bis 7.22 EUR
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IMBG65R260M1HXTMA1 | Infineon Technologies |
 Trans MOSFET N-CH SiC 650V 6A 8-Pin(7+Tab) TO-263 T/R |
auf Bestellung 372 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R260M1HXTMA1 | Infineon Technologies |
Trans MOSFET N-CH SiC 650V 6A 8-Pin(7+Tab) TO-263 T/R |
auf Bestellung 422 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R260M1HXTMA1 | Infineon Technologies |
Trans MOSFET N-CH SiC 650V 6A 8-Pin(7+Tab) TO-263 T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG65R260M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263- Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.1mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V |
auf Bestellung 915 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R260M1HXTMA1 | Infineon Technologies |
SiC MOSFETs SILICON CARBIDE MOSFET |
auf Bestellung 747 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMBG65R260M1HXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 650V; 6A; 65W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 6A Power dissipation: 65W Case: D2PAK-7 Gate-source voltage: -5...23V On-state resistance: 0.26Ω Mounting: SMD Gate charge: 6nC Kind of channel: enhancement |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IMBG65R260M1HXTMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 650V 6A 8-Pin(7+Tab) TO-263 T/R
Trans MOSFET N-CH SiC 650V 6A 8-Pin(7+Tab) TO-263 T/R
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 134+ | 1.09 EUR |
| 136+ | 1.04 EUR |
| 139+ | 0.98 EUR |
| 141+ | 0.93 EUR |
| 250+ | 0.88 EUR |
| IMBG65R260M1HXTMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 650V 6A 8-Pin(7+Tab) TO-263 T/R
Trans MOSFET N-CH SiC 650V 6A 8-Pin(7+Tab) TO-263 T/R
auf Bestellung 422 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 192+ | 2.87 EUR |
| IMBG65R260M1HXTMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 650V 6A 8-Pin(7+Tab) TO-263 T/R
Trans MOSFET N-CH SiC 650V 6A 8-Pin(7+Tab) TO-263 T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 192+ | 2.87 EUR |
| 500+ | 2.68 EUR |
| IMBG65R260M1HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
auf Bestellung 915 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.53 EUR |
| 10+ | 4.31 EUR |
| 100+ | 3.04 EUR |
| 500+ | 2.78 EUR |
| IMBG65R260M1HXTMA1 |
|
Hersteller: Infineon Technologies
SiC MOSFETs SILICON CARBIDE MOSFET
SiC MOSFETs SILICON CARBIDE MOSFET
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.22 EUR |
| 10+ | 4.77 EUR |
| 100+ | 3.38 EUR |
| 500+ | 2.9 EUR |
| 1000+ | 2.75 EUR |
| IMBG65R260M1HXTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 65W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 65W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 65W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 65W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.63 EUR |