IMCQ120R040M2HXTMA1 Infineon Technologies
Hersteller: Infineon Technologies
SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
| Anzahl | Preis |
|---|---|
| 1+ | 15.29 EUR |
| 10+ | 11.99 EUR |
| 100+ | 10 EUR |
| 500+ | 8.91 EUR |
| 750+ | 7.92 EUR |
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Technische Details IMCQ120R040M2HXTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 56A 22PWRBSOP, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V, Power Dissipation (Max): 288W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 5.5mA, Supplier Device Package: PG-HDSOP-22-3, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 42.4 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 800 V.
Weitere Produktangebote IMCQ120R040M2HXTMA1 nach Preis ab 9.14 EUR bis 17.07 EUR
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IMCQ120R040M2HXTMA1 | Hersteller : Infineon Technologies |
Description: SICFET N-CH 1200V 56A 22PWRBSOP Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V Power Dissipation (Max): 288W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 5.5mA Supplier Device Package: PG-HDSOP-22-3 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 800 V |
auf Bestellung 281 Stücke: Lieferzeit 10-14 Tag (e) |
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IMCQ120R040M2HXTMA1 | Hersteller : Infineon Technologies |
Description: SICFET N-CH 1200V 56A 22PWRBSOP Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V Power Dissipation (Max): 288W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 5.5mA Supplier Device Package: PG-HDSOP-22-3 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 800 V |
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