IMDQ65R007M2HXUMA1 Infineon Technologies

Description: IMDQ65R007M2HXUMA1, Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Supplier Device Package: PG-HDSOP-22-1, Vgs(th) (Max) @ Id: 5.6V @ 29.7mA, Power Dissipation (Max): 937W (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V, Current - Continuous Drain (Id) @ 25°C: 196A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 22-PowerBSOP Module, Packaging: Tape & Reel (TR).