IMDQ65R007M2HXUMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 51.31 EUR |
| 10+ | 42.89 EUR |
| 100+ | 37.51 EUR |
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Technische Details IMDQ65R007M2HXUMA1 Infineon Technologies
Description: IMDQ65R007M2HXUMA1, Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Supplier Device Package: PG-HDSOP-22-1, Vgs(th) (Max) @ Id: 5.6V @ 29.7mA, Power Dissipation (Max): 937W (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V, Current - Continuous Drain (Id) @ 25°C: 196A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 22-PowerBSOP Module, Packaging: Tape & Reel (TR).
Weitere Produktangebote IMDQ65R007M2HXUMA1 nach Preis ab 44.21 EUR bis 60.43 EUR
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IMDQ65R007M2HXUMA1 | Infineon Technologies |
 Description: IMDQ65R007M2HXUMA1Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 5.6V @ 29.7mA Power Dissipation (Max): 937W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V Current - Continuous Drain (Id) @ 25°C: 196A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) |
auf Bestellung 722 Stücke: Lieferzeit 10-14 Tag (e) |
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IMDQ65R007M2HXUMA1 | Infineon Technologies |
Description: IMDQ65R007M2HXUMA1 Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 5.6V @ 29.7mA Power Dissipation (Max): 937W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V Current - Continuous Drain (Id) @ 25°C: 196A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) |
auf Bestellung 722 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 722 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IMDQ65R007M2HXUMA1 |
|
Hersteller: Infineon Technologies
Description: IMDQ65R007M2HXUMA1
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-HDSOP-22-1
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Power Dissipation (Max): 937W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Description: IMDQ65R007M2HXUMA1
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-HDSOP-22-1
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Power Dissipation (Max): 937W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 722 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 60.43 EUR |
| 10+ | 48.94 EUR |
| 25+ | 46.08 EUR |
| 100+ | 44.21 EUR |
| IMDQ65R007M2HXUMA1 |
|
Hersteller: Infineon Technologies
Description: IMDQ65R007M2HXUMA1
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-HDSOP-22-1
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Power Dissipation (Max): 937W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Description: IMDQ65R007M2HXUMA1
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-HDSOP-22-1
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Power Dissipation (Max): 937W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
auf Bestellung 722 Stücke:
Lieferzeit 10-14 Tag (e)