IMDQ65R020M2HXUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IMDQ65R020M2HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 1+ | 19.24 EUR |
| 10+ | 15.12 EUR |
| 25+ | 14.09 EUR |
| 100+ | 12.96 EUR |
| 250+ | 12.89 EUR |
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Technische Details IMDQ65R020M2HXUMA1 Infineon Technologies
Description: IMDQ65R020M2HXUMA1, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V, Power Dissipation (Max): 394W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 9.5mA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V.
Weitere Produktangebote IMDQ65R020M2HXUMA1 nach Preis ab 12.18 EUR bis 19.47 EUR
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IMDQ65R020M2HXUMA1 | Hersteller : Infineon Technologies |
SiC MOSFETs SILICON CARBIDE MOSFET |
auf Bestellung 558 Stücke: Lieferzeit 10-14 Tag (e) |
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IMDQ65R020M2HXUMA1 | Hersteller : Infineon Technologies |
Description: IMDQ65R020M2HXUMA1 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V Power Dissipation (Max): 394W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.5mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V |
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