IMDQ75R007M2HXTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IMDQ75R007M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 52.57 EUR |
| 10+ | 40.35 EUR |
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Technische Details IMDQ75R007M2HXTMA1 Infineon Technologies
Description: IMDQ75R007M2HXTMA1, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 222A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V, Power Dissipation (Max): 789W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 28.9mA, Supplier Device Package: PG-HDSOP-22, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 840 V, Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V.
Weitere Produktangebote IMDQ75R007M2HXTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IMDQ75R007M2HXTMA1 | Infineon Technologies |
Description: IMDQ75R007M2HXTMA1 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 222A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 28.9mA Supplier Device Package: PG-HDSOP-22 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 840 V Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IMDQ75R007M2HXTMA1 | Infineon Technologies |
SiC MOSFETs CoolSiC MOSFET 750 V G2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IMDQ75R007M2HXTMA1 |
|
Hersteller: Infineon Technologies
Description: IMDQ75R007M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
Description: IMDQ75R007M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IMDQ75R007M2HXTMA1 |
|
Hersteller: Infineon Technologies
SiC MOSFETs CoolSiC MOSFET 750 V G2
SiC MOSFETs CoolSiC MOSFET 750 V G2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH