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IMDQ75R040M1HXUMA1

IMDQ75R040M1HXUMA1 Infineon Technologies

Infineon_IMDQ75R040M1H_DataSheet_v02_00_EN-3385500.pdf Hersteller: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+16.72 EUR
10+ 14.33 EUR
25+ 12.99 EUR
100+ 11.93 EUR
250+ 11.25 EUR
500+ 10.54 EUR
750+ 9.47 EUR
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Technische Details IMDQ75R040M1HXUMA1 Infineon Technologies

Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V, Power Dissipation (Max): 211W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 6mA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V.

Weitere Produktangebote IMDQ75R040M1HXUMA1 nach Preis ab 12.01 EUR bis 16.83 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IMDQ75R040M1HXUMA1 IMDQ75R040M1HXUMA1 Hersteller : Infineon Technologies Infineon-IMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae16d7a37e64 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+16.83 EUR
10+ 15.2 EUR
25+ 14.49 EUR
100+ 12.58 EUR
250+ 12.01 EUR
Mindestbestellmenge: 2
IMDQ75R040M1HXUMA1 IMDQ75R040M1HXUMA1 Hersteller : Infineon Technologies Infineon-IMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae16d7a37e64 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
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