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IMDQ75R060M1HXUMA1

IMDQ75R060M1HXUMA1 Infineon Technologies

Infineon-IMDQ75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef10b05602d22 Hersteller: Infineon Technologies
Description: IMDQ75R060M1HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.74 EUR
10+9.04 EUR
25+8.37 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IMDQ75R060M1HXUMA1 Infineon Technologies

Description: IMDQ75R060M1HXUMA1, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 4mA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +20V, -2V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V.

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IMDQ75R060M1HXUMA1 IMDQ75R060M1HXUMA1 Hersteller : Infineon Technologies Infineon_IMDQ75R060M1H_DataSheet_v02_00_EN-3450255.pdf SiC MOSFETs SILICON CARBIDE MOSFET
auf Bestellung 536 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.55 EUR
10+11.32 EUR
25+10.14 EUR
100+9.19 EUR
250+8.69 EUR
500+8.38 EUR
750+8.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMDQ75R060M1HXUMA1 IMDQ75R060M1HXUMA1 Hersteller : Infineon Technologies Infineon-IMDQ75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef10b05602d22 Description: IMDQ75R060M1HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
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Im Einkaufswagen  Stück im Wert von  UAH