Produkte > INFINEON TECHNOLOGIES > IMDQ75R140M1HXUMA1
IMDQ75R140M1HXUMA1

IMDQ75R140M1HXUMA1 Infineon Technologies

Infineon-IMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae203c577e8b Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
750+6.21 EUR
Mindestbestellmenge: 750
Produktrezensionen
Produktbewertung abgeben

Technische Details IMDQ75R140M1HXUMA1 Infineon Technologies

Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 1.7mA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V.

Weitere Produktangebote IMDQ75R140M1HXUMA1 nach Preis ab 5.07 EUR bis 9.91 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IMDQ75R140M1HXUMA1 IMDQ75R140M1HXUMA1 Hersteller : Infineon Technologies Infineon_IMDQ75R140M1H_DataSheet_v02_01_EN-3385552.pdf MOSFET SILICON CARBIDE MOSFET
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.84 EUR
10+ 8.27 EUR
25+ 7.81 EUR
100+ 6.69 EUR
250+ 6.32 EUR
500+ 5.95 EUR
750+ 5.07 EUR
IMDQ75R140M1HXUMA1 IMDQ75R140M1HXUMA1 Hersteller : Infineon Technologies Infineon-IMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae203c577e8b Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.91 EUR
10+ 8.9 EUR
25+ 8.41 EUR
100+ 7.29 EUR
250+ 6.92 EUR
Mindestbestellmenge: 2
IMDQ75R140M1HXUMA1 Hersteller : Infineon Technologies infineon-imdq75r140m1h-datasheet-v02_01-en.pdf IMDQ75R140M1HXUMA1
Produkt ist nicht verfügbar