IMLT40R011M2HXTMA1 Infineon Technologies
auf Bestellung 1212 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.59 EUR |
| 10+ | 18.02 EUR |
| 100+ | 14.71 EUR |
| 500+ | 14.26 EUR |
| 1800+ | 13.57 EUR |
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Technische Details IMLT40R011M2HXTMA1 Infineon Technologies
Description: IMLT40R011M2HXTMA1, Packaging: Tube, Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 144A (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V, Power Dissipation (Max): 429W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: PG-HDSOP-16-8, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 200 V.
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IMLT40R011M2HXTMA1 | Hersteller : Infineon Technologies |
 Description: IMLT40R011M2HXTMA1Packaging: Tube Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 144A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: PG-HDSOP-16-8 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 200 V |
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