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IMLT65R026M2HXTMA1

IMLT65R026M2HXTMA1 Infineon Technologies

Infineon-IMLT65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a1439e2a4b Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
auf Bestellung 1770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.79 EUR
10+11.63 EUR
100+9.78 EUR
Mindestbestellmenge: 2
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Technische Details IMLT65R026M2HXTMA1 Infineon Technologies

Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V, Power Dissipation (Max): 365W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 7mA, Supplier Device Package: PG-HDSOP-16-6, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V.

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IMLT65R026M2HXTMA1 IMLT65R026M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMLT65R026M2H-DataSheet-v02_00-EN.pdf SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling
auf Bestellung 2582 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.8 EUR
10+15.31 EUR
100+12.76 EUR
500+11.37 EUR
1000+9.66 EUR
1800+9.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMLT65R026M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMLT65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a1439e2a4b IMLT65R026M2HXTMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMLT65R026M2HXTMA1 IMLT65R026M2HXTMA1 Hersteller : Infineon Technologies Infineon-IMLT65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a1439e2a4b Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH