IMLT65R033M2HXTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 400 V
auf Bestellung 1777 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.38 EUR |
| 10+ | 9.87 EUR |
| 100+ | 7.98 EUR |
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Technische Details IMLT65R033M2HXTMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 5.7mA, Supplier Device Package: PG-HDSOP-16-6, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 400 V.
Weitere Produktangebote IMLT65R033M2HXTMA1 nach Preis ab 8.1 EUR bis 16.42 EUR
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IMLT65R033M2HXTMA1 | Hersteller : Infineon Technologies |
SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling |
auf Bestellung 1766 Stücke: Lieferzeit 10-14 Tag (e) |
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IMLT65R033M2HXTMA1 | Hersteller : Infineon Technologies |
Description: SILICON CARBIDE MOSFET Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.7mA Supplier Device Package: PG-HDSOP-16-6 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 400 V |
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