IMLT65R040M2HXTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 12.57 EUR |
| 10+ | 8.38 EUR |
| 100+ | 6.25 EUR |
| 500+ | 6.11 EUR |
| 1000+ | 5.77 EUR |
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Technische Details IMLT65R040M2HXTMA1 Infineon Technologies
Description: SICFET N-CH 650V 57A HDSOP-16, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V, Power Dissipation (Max): 268W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 4.6mA, Supplier Device Package: PG-HDSOP-16-6, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V.
Weitere Produktangebote IMLT65R040M2HXTMA1 nach Preis ab 6.09 EUR bis 14.5 EUR
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IMLT65R040M2HXTMA1 | Infineon Technologies |
 Description: SICFET N-CH 650V 57A HDSOP-16Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 4.6mA Supplier Device Package: PG-HDSOP-16-6 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V |
auf Bestellung 567 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMLT65R040M2HXTMA1 |
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Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 57A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Description: SICFET N-CH 650V 57A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
auf Bestellung 567 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.5 EUR |
| 10+ | 9.85 EUR |
| 100+ | 7.21 EUR |
| 500+ | 6.09 EUR |