IMSQ120R040M2HHXUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SICFET 2N-CH 1200V 57A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 290W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 800V
Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 18V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-HDSOP-16-221
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 750+ | 12.98 EUR |
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Technische Details IMSQ120R040M2HHXUMA1 Infineon Technologies
Description: SICFET 2N-CH 1200V 57A HDSOP16, Packaging: Tape & Reel (TR), Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), Power - Max: 290W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 800V, Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 18V, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 0V, Vgs(th) (Max) @ Id: 5.1V @ 5.5mA, Supplier Device Package: PG-HDSOP-16-221.
Weitere Produktangebote IMSQ120R040M2HHXUMA1 nach Preis ab 15.88 EUR bis 26.82 EUR
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IMSQ120R040M2HHXUMA1 | Hersteller : Infineon Technologies |
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology |
auf Bestellung 616 Stücke: Lieferzeit 10-14 Tag (e) |
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IMSQ120R040M2HHXUMA1 | Hersteller : Infineon Technologies |
Description: SICFET 2N-CH 1200V 57A HDSOP16 Packaging: Cut Tape (CT) Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) Power - Max: 290W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 800V Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 18V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 0V Vgs(th) (Max) @ Id: 5.1V @ 5.5mA Supplier Device Package: PG-HDSOP-16-221 |
auf Bestellung 1054 Stücke: Lieferzeit 10-14 Tag (e) |
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