IMSQ120R053M2HHXUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesSiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 22.11 EUR |
| 10+ | 17.12 EUR |
| 100+ | 14.8 EUR |
| 750+ | 14.78 EUR |
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Technische Details IMSQ120R053M2HHXUMA1 Infineon Technologies
Description: SICFET 2N-CH 1200V 45A HDSOP16, Packaging: Tape & Reel (TR), Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), Power - Max: 234W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 800V, Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 0V, Vgs(th) (Max) @ Id: 5.1V @ 4.1mA, Supplier Device Package: PG-HDSOP-16-221.
Weitere Produktangebote IMSQ120R053M2HHXUMA1 nach Preis ab 13.03 EUR bis 23.02 EUR
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IMSQ120R053M2HHXUMA1 | Hersteller : Infineon Technologies |
Description: SICFET 2N-CH 1200V 45A HDSOP16 Packaging: Cut Tape (CT) Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) Power - Max: 234W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 800V Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 0V Vgs(th) (Max) @ Id: 5.1V @ 4.1mA Supplier Device Package: PG-HDSOP-16-221 |
auf Bestellung 699 Stücke: Lieferzeit 10-14 Tag (e) |
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IMSQ120R053M2HHXUMA1 | Hersteller : Infineon Technologies |
Description: SICFET 2N-CH 1200V 45A HDSOP16 Packaging: Tape & Reel (TR) Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) Power - Max: 234W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 800V Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 0V Vgs(th) (Max) @ Id: 5.1V @ 4.1mA Supplier Device Package: PG-HDSOP-16-221 |
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