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IMT65R020M2HXUMA1

IMT65R020M2HXUMA1 Infineon Technologies

Infineon-IMT65R020M2H-DataSheet-v02_01-EN.pdf Hersteller: Infineon Technologies
SiC MOSFETs SILICON CARBIDE MOSFET
auf Bestellung 682 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.08 EUR
10+14.24 EUR
100+12.32 EUR
500+11.67 EUR
1000+11.65 EUR
2000+9.91 EUR
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Technische Details IMT65R020M2HXUMA1 Infineon Technologies

Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 105A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V, Power Dissipation (Max): 440W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 9.5mA, Supplier Device Package: PG-HSOF-8-2, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V.

Weitere Produktangebote IMT65R020M2HXUMA1 nach Preis ab 11.71 EUR bis 19.32 EUR

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IMT65R020M2HXUMA1 IMT65R020M2HXUMA1 Hersteller : Infineon Technologies Infineon-IMT65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e05df523c49 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 1254 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.32 EUR
10+13.47 EUR
100+11.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMT65R020M2HXUMA1 IMT65R020M2HXUMA1 Hersteller : INFINEON 4503008.pdf Description: INFINEON - IMT65R020M2HXUMA1 - SIC-MOSFET N-KANAL 650V 105A HSOF-8
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IMT65R020M2HXUMA1 IMT65R020M2HXUMA1 Hersteller : Infineon Technologies Infineon-IMT65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e05df523c49 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
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