IMT65R072M1HXUMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 12.25 EUR |
| 10+ | 8.31 EUR |
| 100+ | 6.2 EUR |
| 2000+ | 5.42 EUR |
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Technische Details IMT65R072M1HXUMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Drain to Source Voltage (Vdss): 650 V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: PG-HSOF-8-2, Technology: SiCFET (Silicon Carbide), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IMT65R072M1HXUMA1 nach Preis ab 6.95 EUR bis 12.25 EUR
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IMT65R072M1HXUMA1 | Infineon Technologies |
 Description: SILICON CARBIDE MOSFETDrain to Source Voltage (Vdss): 650 V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: PG-HSOF-8-2 Technology: SiCFET (Silicon Carbide) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 1994 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMT65R072M1HXUMA1 |
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Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-HSOF-8-2
Technology: SiCFET (Silicon Carbide)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: SILICON CARBIDE MOSFET
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-HSOF-8-2
Technology: SiCFET (Silicon Carbide)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1994 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.25 EUR |
| 10+ | 10.51 EUR |
| 100+ | 8.75 EUR |
| 500+ | 7.72 EUR |
| 1000+ | 6.95 EUR |