IMT65R075M2HXUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 33.7A HSOF-8
Packaging: Tube
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.9A, 18V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
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Technische Details IMT65R075M2HXUMA1 Infineon Technologies
Description: SICFET N-CH 650V 33.7A HSOF-8, Packaging: Tube, Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33.7A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 11.9A, 18V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 2.4mA, Supplier Device Package: PG-HSOF-8, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V.
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IMT65R075M2HXUMA1 | Hersteller : Infineon Technologies |
SiC MOSFETs SILICON CARBIDE MOSFET |
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