IMT65R163M1HXUMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.45 EUR |
| 10+ | 6.85 EUR |
| 100+ | 5.02 EUR |
| 500+ | 4.46 EUR |
| 1000+ | 3.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IMT65R163M1HXUMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Technology: SiCFET (Silicon Carbide), Supplier Device Package: PG-HSOF-8-2, Drive Voltage (Max Rds On, Min Rds On): 18V, Drain to Source Voltage (Vdss): 650 V.
Weitere Produktangebote IMT65R163M1HXUMA1 nach Preis ab 4.39 EUR bis 10.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IMT65R163M1HXUMA1 | Infineon Technologies |
 Description: SILICON CARBIDE MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Technology: SiCFET (Silicon Carbide) Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 650 V |
auf Bestellung 1594 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IMT65R163M1HXUMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 1594 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.89 EUR |
| 10+ | 7.29 EUR |
| 100+ | 5.26 EUR |
| 500+ | 4.39 EUR |