IMT65R260M1HXUMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 6.76 EUR |
| 10+ | 4.44 EUR |
| 100+ | 3.15 EUR |
| 500+ | 2.68 EUR |
| 2000+ | 2.5 EUR |
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Technische Details IMT65R260M1HXUMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Technology: SiCFET (Silicon Carbide), Supplier Device Package: PG-HSOF-8-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Drain to Source Voltage (Vdss): 650 V.
Weitere Produktangebote IMT65R260M1HXUMA1 nach Preis ab 2.92 EUR bis 7.85 EUR
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IMT65R260M1HXUMA1 | Infineon Technologies |
 Description: SILICON CARBIDE MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Technology: SiCFET (Silicon Carbide) Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 650 V |
auf Bestellung 1870 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMT65R260M1HXUMA1 |
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Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 1870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.85 EUR |
| 10+ | 5.2 EUR |
| 100+ | 3.7 EUR |
| 500+ | 3.06 EUR |
| 1000+ | 2.92 EUR |