IMT65R50M2HXUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 48.1A PG-HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 2000+ | 6.52 EUR |
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Technische Details IMT65R50M2HXUMA1 Infineon Technologies
Description: SICFET N-CH 650V 48.1A PG-HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc), Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V, Power Dissipation (Max): 237W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 3.7mA, Supplier Device Package: PG-HSOF-8-2, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V.
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IMT65R50M2HXUMA1 | Hersteller : Infineon Technologies |
Description: SICFET N-CH 650V 48.1A PG-HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V Power Dissipation (Max): 237W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 3.7mA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |