IMW120R007M1HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
SiC MOSFETs CoolSiC 1200 V, 7 mohm SiC Trench MOSFET in TO247-3 package
| Anzahl | Preis |
|---|---|
| 1+ | 74.01 EUR |
| 25+ | 72.64 EUR |
| 50+ | 72.55 EUR |
| 240+ | 62.85 EUR |
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Technische Details IMW120R007M1HXKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 225A (Tc), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V, Power Dissipation (Max): 750W (Tc), Vgs(th) (Max) @ Id: 5.2V @ 47mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V.
Weitere Produktangebote IMW120R007M1HXKSA1 nach Preis ab 50.09 EUR bis 76.03 EUR
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IMW120R007M1HXKSA1 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 47mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V |
auf Bestellung 1058 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMW120R007M1HXKSA1 |
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Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
auf Bestellung 1058 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 76.03 EUR |
| 30+ | 51.55 EUR |
| 120+ | 50.09 EUR |