Technische Details IMW120R040M1HXKSA1 Infineon Technologies
Description: INFINEON - IMW120R040M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 55 A, 1.2 kV, 0.039 ohm, TO-247, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 55A, hazardous: false, rohsPhthalatesCompliant: YES, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4.2V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 227W, Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: Produktreihe CoolSiC Trench, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.039ohm, SVHC: No SVHC (21-Jan-2025).
Weitere Produktangebote IMW120R040M1HXKSA1 nach Preis ab 11.01 EUR bis 25.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IMW120R040M1HXKSA1 | Infineon Technologies |
 Trans MOSFET N-CH SiC 1.2KV 55A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
|
IMW120R040M1HXKSA1 | Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 55A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 1680 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
|
IMW120R040M1HXKSA1 | Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 55A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
IMW120R040M1HXKSA1 | Infineon Technologies |
SiC MOSFETs CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-3 package |
auf Bestellung 292 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IMW120R040M1HXKSA1 | Infineon Technologies |
Description: SIC DISCRETE Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +20V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 5.2V @ 10mA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 312 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IMW120R040M1HXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 1.2KV 55A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 1.2KV 55A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 12.72 EUR |
| 15+ | 11.97 EUR |
| 25+ | 11.01 EUR |
| IMW120R040M1HXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 1.2KV 55A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 1.2KV 55A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 1680 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 240+ | 14.64 EUR |
| IMW120R040M1HXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 1.2KV 55A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 1.2KV 55A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 16.93 EUR |
| 50+ | 16.48 EUR |
| IMW120R040M1HXKSA1 |
|
Hersteller: Infineon Technologies
SiC MOSFETs CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-3 package
SiC MOSFETs CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-3 package
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.74 EUR |
| 10+ | 20.5 EUR |
| 25+ | 15.65 EUR |
| 100+ | 13.51 EUR |
| IMW120R040M1HXKSA1 |
|
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 5.2V @ 10mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SIC DISCRETE
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 5.2V @ 10mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.32 EUR |
| 30+ | 15.33 EUR |
| 120+ | 13.14 EUR |