IMW120R040M1HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
SiC MOSFETs CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-3 package
| Anzahl | Preis |
|---|---|
| 1+ | 19.11 EUR |
| 10+ | 17.23 EUR |
| 25+ | 13.15 EUR |
| 100+ | 11.35 EUR |
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Technische Details IMW120R040M1HXKSA1 Infineon Technologies
Description: SIC DISCRETE, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Part Status: Active, Supplier Device Package: PG-TO247-3, Vgs(th) (Max) @ Id: 5.2V @ 10mA, Power Dissipation (Max): 227W (Tc), Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IMW120R040M1HXKSA1 nach Preis ab 11.04 EUR bis 21.28 EUR
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IMW120R040M1HXKSA1 | Infineon Technologies |
Description: SIC DISCRETE Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +20V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 5.2V @ 10mA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 312 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMW120R040M1HXKSA1 |
|
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 5.2V @ 10mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SIC DISCRETE
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 5.2V @ 10mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.28 EUR |
| 30+ | 12.88 EUR |
| 120+ | 11.04 EUR |