IMW65R007M2HXKSA1 Infineon Technologies
auf Bestellung 1979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 47.70 EUR |
| 10+ | 47.41 EUR |
| 25+ | 33.62 EUR |
| 100+ | 32.05 EUR |
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Technische Details IMW65R007M2HXKSA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 171A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 29.7mA, Supplier Device Package: PG-TO247-3-U06, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V.
Weitere Produktangebote IMW65R007M2HXKSA1 nach Preis ab 37.38 EUR bis 50.62 EUR
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IMW65R007M2HXKSA1 | Hersteller : Infineon Technologies |
 Description: SILICON CARBIDE MOSFETPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 29.7mA Supplier Device Package: PG-TO247-3-U06 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V |
auf Bestellung 79 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMW65R007M2HXKSA1 | Hersteller : Infineon Technologies |
IMW65R007M2HXKSA1 |
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