IMW65R010M2HXKSA1 Infineon Technologies

Description: IMW65R010M2HXKSA1, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V, Power Dissipation (Max): 440W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 18.7mA, Supplier Device Package: PG-TO247-3-40, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V.