IMW65R010M2HXKSA1 Infineon Technologies
auf Bestellung 243 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 33.49 EUR |
| 10+ | 29.76 EUR |
| 100+ | 26.03 EUR |
| 240+ | 24.29 EUR |
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Technische Details IMW65R010M2HXKSA1 Infineon Technologies
Description: IMW65R010M2HXKSA1, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V, Power Dissipation (Max): 440W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 18.7mA, Supplier Device Package: PG-TO247-3-40, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V.
Weitere Produktangebote IMW65R010M2HXKSA1 nach Preis ab 26.00 EUR bis 38.05 EUR
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IMW65R010M2HXKSA1 | Hersteller : Infineon Technologies |
 Description: IMW65R010M2HXKSA1Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V Power Dissipation (Max): 440W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 18.7mA Supplier Device Package: PG-TO247-3-40 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
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