IMW65R020M2HXKSA1 Infineon Technologies
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 32.74 EUR |
| 10+ | 28.85 EUR |
| 25+ | 28.07 EUR |
| 50+ | 26.51 EUR |
| 100+ | 24.94 EUR |
| 240+ | 24.15 EUR |
| 480+ | 22.58 EUR |
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Technische Details IMW65R020M2HXKSA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 83A (Tj), Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V, Power Dissipation (Max): 273W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 9.5mA, Supplier Device Package: PG-TO247-3-40, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IMW65R020M2HXKSA1 | Hersteller : Infineon Technologies |
 IMW65R020M2HXKSA1 |
Produkt ist nicht verfügbar |
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| IMW65R020M2HXKSA1 | Hersteller : Infineon Technologies |
Description: SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 83A (Tj) Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.5mA Supplier Device Package: PG-TO247-3-40 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V |
Produkt ist nicht verfügbar |