IMW65R020M2HXKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 20.87 EUR |
| 10+ | 12.72 EUR |
| 100+ | 11.46 EUR |
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Technische Details IMW65R020M2HXKSA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Supplier Device Package: PG-TO247-3-40, Vgs(th) (Max) @ Id: 5.6V @ 9.5mA, Power Dissipation (Max): 273W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V, Current - Continuous Drain (Id) @ 25°C: 83A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V.
Weitere Produktangebote IMW65R020M2HXKSA1 nach Preis ab 11.07 EUR bis 20.96 EUR
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IMW65R020M2HXKSA1 | Infineon Technologies |
 Description: SILICON CARBIDE MOSFETSupplier Device Package: PG-TO247-3-40 Vgs(th) (Max) @ Id: 5.6V @ 9.5mA Power Dissipation (Max): 273W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V |
auf Bestellung 286 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMW65R020M2HXKSA1 |
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Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Supplier Device Package: PG-TO247-3-40
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Power Dissipation (Max): 273W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Description: SILICON CARBIDE MOSFET
Supplier Device Package: PG-TO247-3-40
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Power Dissipation (Max): 273W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
auf Bestellung 286 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.96 EUR |
| 30+ | 12.78 EUR |
| 120+ | 11.07 EUR |