IMW65R027M1HXKSA1 Infineon Technologies

Description: MOSFET 650V NCH SIC TRENCH, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V, Power Dissipation (Max): 189W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 11mA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V.