IMW65R039M1HXKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 13.75 EUR |
| 10+ | 8.48 EUR |
| 100+ | 7.2 EUR |
| 480+ | 7.04 EUR |
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Technische Details IMW65R039M1HXKSA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +20V, -2V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: PG-TO247-3-41, Vgs(th) (Max) @ Id: 5.7V @ 7.5mA, Power Dissipation (Max): 176W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole.
Weitere Produktangebote IMW65R039M1HXKSA1 nach Preis ab 8.52 EUR bis 14.43 EUR
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IMW65R039M1HXKSA1 | Infineon Technologies |
 Description: SILICON CARBIDE MOSFET, PG-TO247Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +20V, -2V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO247-3-41 Vgs(th) (Max) @ Id: 5.7V @ 7.5mA Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole |
auf Bestellung 119 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMW65R039M1HXKSA1 |
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Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Description: SILICON CARBIDE MOSFET, PG-TO247
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.43 EUR |
| 30+ | 8.52 EUR |