IMW65R107M1HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 633 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.11 EUR |
30+ | 10.47 EUR |
120+ | 9.37 EUR |
510+ | 8.27 EUR |
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Produktbewertung abgeben
Technische Details IMW65R107M1HXKSA1 Infineon Technologies
Description: INFINEON - IMW65R107M1HXKSA1 - Siliziumkarbid-MOSFET, SiC-Trench, Eins, n-Kanal, 20 A, 650 V, 0.107 ohm, TO-247, tariffCode: 85412900, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 20A, hazardous: false, rohsPhthalatesCompliant: YES, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4.5V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 75W, Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: CoolSiC M1, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.107ohm, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote IMW65R107M1HXKSA1 nach Preis ab 10.22 EUR bis 19.14 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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IMW65R107M1HXKSA1 | Hersteller : Infineon Technologies | MOSFET SILICON CARBIDE MOSFET |
auf Bestellung 370 Stücke: Lieferzeit 14-28 Tag (e) |
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IMW65R107M1HXKSA1 | Hersteller : INFINEON |
Description: INFINEON - IMW65R107M1HXKSA1 - Siliziumkarbid-MOSFET, SiC-Trench, Eins, n-Kanal, 20 A, 650 V, 0.107 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: CoolSiC M1 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.107ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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IMW65R107M1HXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH SiC 650V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IMW65R107M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247 Case: TO247 Mounting: THT Drain-source voltage: 650V Drain current: 13A On-state resistance: 139mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -5...23V Pulsed drain current: 48A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IMW65R107M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247 Case: TO247 Mounting: THT Drain-source voltage: 650V Drain current: 13A On-state resistance: 139mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -5...23V Pulsed drain current: 48A |
Produkt ist nicht verfügbar |