IMWH170R1K0M1XKSA1 Infineon Technologies

Description: IMWH170R1K0M1XKSA1, Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 12 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): 15V, 12V, Drive Voltage (Max Rds On, Min Rds On): 12V, 15V, Supplier Device Package: PG-TO247-3-U04, Vgs(th) (Max) @ Id: 5.7V @ 1.2mA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 880mOhm @ 1A, 15V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tray.