IMWH170R1K0M1XKSA1 Infineon Technologies

Description: IMWH170R1K0M1XKSA1, Packaging: Tray, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj), Rds On (Max) @ Id, Vgs: 880mOhm @ 1A, 15V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 1.2mA, Supplier Device Package: PG-TO247-3-U04, Drive Voltage (Max Rds On, Min Rds On): 12V, 15V, Vgs (Max): 15V, 12V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 1000 V.