IMWH170R1K0M1XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IMWH170R1K0M1XKSA1
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
Rds On (Max) @ Id, Vgs: 880mOhm @ 1A, 15V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.2mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 1000 V
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.3 EUR |
| 10+ | 5.55 EUR |
| 30+ | 5.03 EUR |
| 90+ | 4.65 EUR |
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Technische Details IMWH170R1K0M1XKSA1 Infineon Technologies
Description: IMWH170R1K0M1XKSA1, Packaging: Tray, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj), Rds On (Max) @ Id, Vgs: 880mOhm @ 1A, 15V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 1.2mA, Supplier Device Package: PG-TO247-3-U04, Drive Voltage (Max Rds On, Min Rds On): 12V, 15V, Vgs (Max): 15V, 12V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 1000 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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IMWH170R1K0M1XKSA1 | Hersteller : Infineon Technologies |
SiC MOSFETs SIC DISCRETE |
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