auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.29 EUR |
| 10+ | 7.81 EUR |
| 25+ | 7.37 EUR |
| 100+ | 6.32 EUR |
| 240+ | 5.97 EUR |
| 480+ | 5.61 EUR |
| 1200+ | 4.80 EUR |
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Technische Details IMWH170R650M1XKSA1 Infineon Technologies
Description: IMWH170R650M1XKSA1, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 580mOhm @ 1.5A, 15V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 1.7mA, Supplier Device Package: PG-TO247-3-U04, Drive Voltage (Max Rds On, Min Rds On): 12V, 15V, Vgs (Max): 15V, 12V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 337 pF @ 1000 V.
Weitere Produktangebote IMWH170R650M1XKSA1 nach Preis ab 6.04 EUR bis 10.58 EUR
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IMWH170R650M1XKSA1 | Hersteller : Infineon Technologies |
Description: IMWH170R650M1XKSA1 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 1.5A, 15V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.7mA Supplier Device Package: PG-TO247-3-U04 Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): 15V, 12V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 337 pF @ 1000 V |
auf Bestellung 475 Stücke: Lieferzeit 10-14 Tag (e) |
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