IMWH170R650M1XKSA1 Infineon Technologies

Description: IMWH170R650M1XKSA1, Input Capacitance (Ciss) (Max) @ Vds: 337 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 12 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): 15V, 12V, Drive Voltage (Max Rds On, Min Rds On): 12V, 15V, Supplier Device Package: PG-TO247-3-U04, Vgs(th) (Max) @ Id: 5.7V @ 1.7mA, Power Dissipation (Max): 88W (Tc), Rds On (Max) @ Id, Vgs: 580mOhm @ 1.5A, 15V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.