IMYH200R050M1HXKSA1 Infineon Technologies

Description: SIC DISCRETE, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V, Drain to Source Voltage (Vdss): 2000 V, Vgs (Max): +20V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Supplier Device Package: PG-TO247-4-U04, Vgs(th) (Max) @ Id: 5.5V @ 12.1mA, Power Dissipation (Max): 348W (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.