IMYH200R050M1HXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 12.1mA
Supplier Device Package: PG-TO247-4-U04
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 73.22 EUR |
| 10+ | 65.23 EUR |
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Technische Details IMYH200R050M1HXKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 12.1mA, Supplier Device Package: PG-TO247-4-U04, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -7V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V.
Weitere Produktangebote IMYH200R050M1HXKSA1 nach Preis ab 52.18 EUR bis 73.73 EUR
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IMYH200R050M1HXKSA1 | Hersteller : Infineon Technologies |
MOSFET SIC DISCRETE |
auf Bestellung 240 Stücke: Lieferzeit 150-154 Tag (e) |
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| IMYH200R050M1HXKSA1 | Hersteller : Infineon Technologies |
Silicon Carbide MOSFET |
Produkt ist nicht verfügbar |