IMYH200R050M1HXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesSiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 44.19 EUR |
| 25+ | 39.92 EUR |
| 240+ | 29.00 EUR |
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Technische Details IMYH200R050M1HXKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 12.1mA, Supplier Device Package: PG-TO247-4-U04, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -7V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V.
Weitere Produktangebote IMYH200R050M1HXKSA1 nach Preis ab 44.13 EUR bis 59.38 EUR
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IMYH200R050M1HXKSA1 | Hersteller : Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 12.1mA Supplier Device Package: PG-TO247-4-U04 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 2000 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V |
auf Bestellung 140 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMYH200R050M1HXKSA1 | Hersteller : Infineon Technologies |
Silicon Carbide MOSFET |
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