Technische Details IMYH200R100M1HXKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 131mOhm @ 10A, 18V, Power Dissipation (Max): 217W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 6mA, Supplier Device Package: PG-TO247-4-U04, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -7V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V.
Weitere Produktangebote IMYH200R100M1HXKSA1
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| IMYH200R100M1HXKSA1 | Hersteller : Infineon Technologies |
 Silicon Carbide MOSFET |
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IMYH200R100M1HXKSA1 | Hersteller : Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 131mOhm @ 10A, 18V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 6mA Supplier Device Package: PG-TO247-4-U04 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 2000 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V |
Produkt ist nicht verfügbar |
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IMYH200R100M1HXKSA1 | Hersteller : Infineon Technologies |
SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package |
Produkt ist nicht verfügbar |