IMZ120R045M1XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SICFET N-CH 1200V 52A TO247-4
Packaging: Tray
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
FET Feature: Current Sensing
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 31.36 EUR |
| 10+ | 27.88 EUR |
| 30+ | 26.01 EUR |
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Technische Details IMZ120R045M1XKSA1 Infineon Technologies
Description: SICFET N-CH 1200V 52A TO247-4, Packaging: Tray, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V, FET Feature: Current Sensing, Power Dissipation (Max): 228W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 10mA, Supplier Device Package: PG-TO247-4-1, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V.
Weitere Produktangebote IMZ120R045M1XKSA1 nach Preis ab 21.35 EUR bis 34.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IMZ120R045M1XKSA1 | Hersteller : Infineon Technologies |
MOSFET SIC DISCRETE |
auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZ120R045M1XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 52A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZ120R045M1XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 52A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZ120R045M1XKSA1 | Hersteller : INFINEON |
Description: INFINEON - IMZ120R045M1XKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 52 A, 1.2 kV, 0.045 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 228W Anzahl der Pins: 4Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 131 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZ120R045M1XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 52A Tube |
Produkt ist nicht verfügbar |
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| IMZ120R045M1XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 130A Power dissipation: 114W Case: TO247-4 Gate-source voltage: -10...20V On-state resistance: 59mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
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| IMZ120R045M1XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 130A Power dissipation: 114W Case: TO247-4 Gate-source voltage: -10...20V On-state resistance: 59mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |