IMZ120R140M1HXKSA1 INFINEON
Hersteller: INFINEON
Description: INFINEON - IMZ120R140M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 19 A, 1.2 kV, 0.14 ohm, TO-247
tariffCode: 85411000
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 19A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4.5V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 94W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: CoolSiC
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.14ohm
| Anzahl | Privatkunde |
|---|---|
| 19+ | 13.47 EUR |
| 22+ | 10.77 EUR |
| 26+ | 8.31 EUR |
| 50+ | 7.98 EUR |
| 100+ | 7.66 EUR |
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Technische Details IMZ120R140M1HXKSA1 INFINEON
Description: INFINEON - IMZ120R140M1HXKSA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 19 A, 1.2 kV, 0.14 ohm, TO-247, tariffCode: 85411000, euEccn: NLR, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 19A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4.5V, MOSFET-Modul-Konfiguration: Eins, Verlustleistung: 94W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-247, Anzahl der Pins: 4Pin(s), Produktpalette: CoolSiC, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 18V, Drain-Source-Durchgangswiderstand: 0.14ohm.
Weitere Produktangebote IMZ120R140M1HXKSA1 nach Preis ab 7.12 EUR bis 14.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IMZ120R140M1HXKSA1 | Infineon Technologies |
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package |
auf Bestellung 399 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZ120R140M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 19A TO247-4 Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Supplier Device Package: PG-TO247-4-1 Vgs(th) (Max) @ Id: 5.7V @ 2.5mA |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMZ120R140M1HXKSA1 |
|
Hersteller: Infineon Technologies
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
auf Bestellung 399 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.64 EUR |
| 10+ | 8.16 EUR |
| 480+ | 7.12 EUR |
| IMZ120R140M1HXKSA1 |
|
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 19A TO247-4
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO247-4-1
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Description: SICFET N-CH 1.2KV 19A TO247-4
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO247-4-1
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.14 EUR |