IMZA120R022M2HXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IMZA120R022M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 32A, 18V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.25 EUR |
| 30+ | 14.31 EUR |
| 120+ | 12.67 EUR |
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Technische Details IMZA120R022M2HXKSA1 Infineon Technologies
Description: IMZA120R022M2HXKSA1, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 32A, 18V, Power Dissipation (Max): 329W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 10.1mA, Supplier Device Package: PG-TO247-4-8, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V.
Weitere Produktangebote IMZA120R022M2HXKSA1 nach Preis ab 13.38 EUR bis 24.25 EUR
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IMZA120R022M2HXKSA1 | Hersteller : Infineon Technologies |
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 |
auf Bestellung 230 Stücke: Lieferzeit 10-14 Tag (e) |
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