IMZA120R022M2HXKSA1 Infineon Technologies

Description: IMZA120R022M2HXKSA1, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Supplier Device Package: PG-TO247-4-8, Vgs(th) (Max) @ Id: 5.1V @ 10.1mA, Power Dissipation (Max): 329W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 32A, 18V.