IMZA65R007M2HXKSA1 Infineon Technologies
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 240+ | 35.50 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IMZA65R007M2HXKSA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 29.7mA, Supplier Device Package: PG-TO247-4-U02, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V.
Weitere Produktangebote IMZA65R007M2HXKSA1 nach Preis ab 32.42 EUR bis 49.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IMZA65R007M2HXKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH SiC 650V 210A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
IMZA65R007M2HXKSA1 | Hersteller : Infineon Technologies |
SiC MOSFETs SILICON CARBIDE MOSFET |
auf Bestellung 161 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
IMZA65R007M2HXKSA1 | Hersteller : Infineon Technologies |
Description: SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 29.7mA Supplier Device Package: PG-TO247-4-U02 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V |
auf Bestellung 349 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IMZA65R007M2HXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 650V 210A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |