Technische Details IMZA65R007M2HXKSA1 Infineon Technologies
Description: SICFET N-CH 650V 210A PG-TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 29.7mA, Supplier Device Package: PG-TO247-4-U02, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V.
Weitere Produktangebote IMZA65R007M2HXKSA1 nach Preis ab 33.97 EUR bis 64.3 EUR
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IMZA65R007M2HXKSA1 | Infineon Technologies |
 Trans MOSFET N-CH SiC 650V 210A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZA65R007M2HXKSA1 | Infineon Technologies |
SiC MOSFETs SILICON CARBIDE MOSFET |
auf Bestellung 1393 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZA65R007M2HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 650V 210A PG-TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 29.7mA Supplier Device Package: PG-TO247-4-U02 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V |
auf Bestellung 625 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMZA65R007M2HXKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 650V 210A 4-Pin(4+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 650V 210A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 48.15 EUR |
| IMZA65R007M2HXKSA1 |
|
Hersteller: Infineon Technologies
SiC MOSFETs SILICON CARBIDE MOSFET
SiC MOSFETs SILICON CARBIDE MOSFET
auf Bestellung 1393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 50.74 EUR |
| 10+ | 33.97 EUR |
| IMZA65R007M2HXKSA1 |
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Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 210A PG-TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Description: SICFET N-CH 650V 210A PG-TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
auf Bestellung 625 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 64.3 EUR |
| 30+ | 42.2 EUR |
| 120+ | 38.7 EUR |