Technische Details IMZA65R033M2HXKSA1 Infineon Technologies
Description: IMZA65R033M2HXKSA1, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V, Power Dissipation (Max): 194W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 5.7mA, Supplier Device Package: PG-TO247-4-8, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V.
Weitere Produktangebote IMZA65R033M2HXKSA1 nach Preis ab 8.36 EUR bis 17.64 EUR
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IMZA65R033M2HXKSA1 | Infineon Technologies |
 Trans MOSFET N-CH SiC 650V 53A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZA65R033M2HXKSA1 | Infineon Technologies |
Description: IMZA65R033M2HXKSA1 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.7mA Supplier Device Package: PG-TO247-4-8 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V |
auf Bestellung 110 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZA65R033M2HXKSA1 | Infineon Technologies |
SiC MOSFETs CoolSiC MOSFET 650 V, 33 mohm G2 |
auf Bestellung 6319 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMZA65R033M2HXKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 650V 53A 4-Pin(4+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 650V 53A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 12.18 EUR |
| 17+ | 8.77 EUR |
| 30+ | 8.36 EUR |
| IMZA65R033M2HXKSA1 |
|
Hersteller: Infineon Technologies
Description: IMZA65R033M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
Description: IMZA65R033M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.07 EUR |
| 30+ | 9.58 EUR |
| IMZA65R033M2HXKSA1 |
|
Hersteller: Infineon Technologies
SiC MOSFETs CoolSiC MOSFET 650 V, 33 mohm G2
SiC MOSFETs CoolSiC MOSFET 650 V, 33 mohm G2
auf Bestellung 6319 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.64 EUR |
| 10+ | 11.81 EUR |
| 100+ | 10.4 EUR |
| 480+ | 9.57 EUR |
| 1200+ | 9.13 EUR |