IMZA65R040M2HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 2+ | 13.69 EUR |
| 30+ | 8.05 EUR |
| 120+ | 6.81 EUR |
| 510+ | 6.34 EUR |
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Technische Details IMZA65R040M2HXKSA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V, Power Dissipation (Max): 172W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 4.6mA, Supplier Device Package: PG-TO247-4-8, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V.
Weitere Produktangebote IMZA65R040M2HXKSA1 nach Preis ab 6.76 EUR bis 14.12 EUR
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IMZA65R040M2HXKSA1 | Infineon Technologies |
SiC MOSFETs SILICON CARBIDE MOSFET |
auf Bestellung 2160 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IMZA65R040M2HXKSA1 |
|
Hersteller: Infineon Technologies
SiC MOSFETs SILICON CARBIDE MOSFET
SiC MOSFETs SILICON CARBIDE MOSFET
auf Bestellung 2160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.12 EUR |
| 10+ | 8.32 EUR |
| 100+ | 7.13 EUR |
| 480+ | 6.76 EUR |