IMZA65R050M2HXKSA1 Infineon Technologies
auf Bestellung 434 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 19.1 EUR |
| 10+ | 16.37 EUR |
| 25+ | 14.85 EUR |
| 100+ | 13.66 EUR |
| 240+ | 12.83 EUR |
| 480+ | 12.04 EUR |
| 1200+ | 10.82 EUR |
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Technische Details IMZA65R050M2HXKSA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V, Power Dissipation (Max): 153W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 3.7mA, Supplier Device Package: PG-TO247-4-8, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V.
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IMZA65R050M2HXKSA1 | Hersteller : Infineon Technologies |
 Description: SILICON CARBIDE MOSFETPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V Power Dissipation (Max): 153W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 3.7mA Supplier Device Package: PG-TO247-4-8 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V |
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